up to 6 ghz medium power silicon bipolar transistor technical data features ? high output power: 20.5 dbm typical p 1 db at 2.0 ghz ? high gain at 1 db compression: 14.0 db typical g 1 db at 2.0 ghz ? low noise figure: 2.0 db typical nf o at 2.0 ghz ? high gain-bandwidth product: 8.0 ghz typical f t ? low cost plastic package AT-42085 85 plastic package description agilents AT-42085 is a general purpose npn bipolar transistor that offers excellent high fre- quency performance. the at- 42085 is housed in a low cost .085" diameter plastic package. the 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. the 20 emitter finger interdigi- tated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applica- tions. applications include use in wireless systems as an lna, gain stage, buffer, oscillator, and mixer. an optimum noise match near 50 w up to 1 ghz, makes this device easy to use as a low noise amplifier. the AT-42085 bipolar transistor is fabricated using agilents 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passi- vated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device.
2 AT-42085 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 80 p t power dissipation [2,3] mw 500 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance [2,4] : q jc = 130 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 7.7 mw/ c for t c > 85 c. 4. see measurements section thermal resistance for more information. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 35 ma f = 1.0 ghz db 15.5 17.0 f = 2.0 ghz 11.0 f = 4.0 ghz 5.0 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 20.5 v ce = 8 v, i c = 35 ma f= 4.0 ghz 20.0 g 1 db 1 db compressed gain; v ce = 8 v, i c = 35 ma f = 2.0 ghz db 14.0 f = 4.0 ghz 9.5 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 2.0 ghz db 2.0 f = 4.0 ghz 3.5 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 2.0 ghz db 13.5 f = 4.0 ghz 9.5 f t gain bandwidth product: v ce = 8 v, i c = 35 ma ghz 8.0 h fe forward current transfer ratio; v ce = 8 v, i c = 35 ma 30 150 270 i cbo collector cutoff current; v cb = 8 v m a 0.2 i ebo emitter cutoff current; v eb = 1 v m a 2.0 c cb collector base capacitance [1] : v cb = 8 v, f = 1 mhz pf 0.32 note: 1. for this test, the emitter is grounded. electrical specifications, t a = 25 c symbol parameters and test conditions units min. typ. max.
3 AT-42085 typical performance, t a = 25 c frequency (ghz) figure 4. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 35 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 i c (ma) figure 2. output power and 1 db compressed gain vs. collector current and frequency. v ce = 8 v. 24 20 16 12 8 4 g 1 db (db) p 1 db (dbm) 0 1020 304050 p 1db g 1db 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 msg mag |s 21e | 2 i c (ma) figure 1. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 12 8 4 0 |s 21e | 2 gain (db) 0 1020 304050 1.0 ghz 2.0 ghz 4.0 ghz i c (ma) figure 3. output power and 1 db compressed gain vs. collector current and voltage. f = 2.0 ghz. 10 v 4 v 6 v 4 v 10 v 6 v 24 20 16 12 16 14 12 10 g 1 db (db) p 1 db (dbm) 0 1020 304050 p 1db g 1db frequency (ghz) figure 5. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10 ma. gain (db) 24 21 18 15 12 9 6 3 0 4 3 2 1 0 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 g a nf o
4 AT-42085 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .72 -50 28.5 26.52 152 -37.0 .014 73 .90 -16 0.5 .66 -139 21.0 11.23 103 -29.2 .035 36 .53 -32 1.0 .65 -168 15.5 5.96 84 -28.6 .037 39 .45 -33 1.5 .65 175 12.2 4.06 71 -27.0 .045 46 .43 -36 2.0 .65 163 9.7 3.06 60 -25.3 .054 51 .42 -41 2.5 .66 157 8.0 2.51 55 -24.0 .063 60 .42 -42 3.0 .68 149 6.3 2.07 46 -22.8 .072 65 .41 -48 3.5 .68 141 5.1 1.79 38 -21.4 .085 64 .43 -55 4.0 .69 133 3.9 1.57 29 -19.7 .104 64 .45 -61 4.5 .69 125 3.0 1.41 21 -18.5 .119 63 .46 -66 5.0 .69 114 2.2 1.28 12 -17.1 .139 58 .47 -71 5.5 .71 103 1.4 1.17 3 -15.9 .161 55 .44 -76 6.0 .75 91 0.6 1.07 -6 -15.1 .177 49 .40 -85 AT-42085 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 35 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .54 -90 33.1 45.38 137 -40.1 .010 66 .76 -26 0.5 .61 -163 22.6 13.45 95 -32.8 .023 52 .38 -30 1.0 .61 178 16.8 6.90 79 -29.5 .034 61 .34 -28 1.5 .62 167 13.4 4.67 68 -26.4 .048 68 .32 -31 2.0 .63 156 10.9 3.52 59 -23.9 .064 66 .31 -36 2.5 .64 152 9.2 2.89 54 -22.5 .075 68 .31 -40 3.0 .66 146 7.6 2.39 45 -21.2 .088 69 .30 -48 3.5 .67 139 6.3 2.07 37 -19.8 .102 67 .31 -58 4.0 .68 131 5.2 1.81 28 -18.6 .117 65 .33 -67 4.5 .68 123 4.2 1.62 19 -17.2 .138 60 .35 -73 5.0 .68 114 3.4 1.48 10 -16.4 .152 56 .35 -79 5.5 .71 103 2.5 1.34 1 -15.3 .171 50 .34 -85 6.0 .74 93 1.7 1.21 -8 -14.5 .188 46 .31 -96 a model for this device is available in the device models section. AT-42085 noise parameters: v ce = 8 v, i c = 10 ma freq. nf o g opt ghz db mag ang r n /50 0.1 1.1 .05 16 0.13 0.5 1.2 .06 77 0.13 1.0 1.3 .10 131 0.12 2.0 2.0 .24 -179 0.11 4.0 3.5 .46 -128 0.25
5 85 plastic package dimensions 1 3 4 2 5 typ. 45 emitter emitter collector base .085 2.15 .286 .030 7.36 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .020 .51 .07 0.43 .060 .010 1.52 .25 .006 .002 .15 .05 0.143 0.015 3.63 0.38 420
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-8913e (11/99)
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